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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1983 Volume 10, Number 5, Pages 1007–1009 (Mi qe4242)

This article is cited in 6 papers

Brief Communications

Electron-beam-pumped lasers using heteroepitaxial zinc selenide obtained from organoelemental compounds

O. V. Bogdankevich, L. A. Zhuravlev, A. D. Konovalov, P. I. Kuznetsov, G. A. Meerovich, V. B. Novikov, Yu. V. Petrushenko, V. N. Ulasyuk, V. V. Shemet


Abstract: Investigations were made of the feasibility of using heteroepitaxial ZnSe films grown on GaAs substrates by gas-phase chemical deposition from organoelemental compounds as the active medium of electron-beampumped semiconductor lasers. Studies were made of the characteristics of active elements in transverse and longitudinal excitation geometries and methods of improving them were examined.

UDC: 621.375.826+621.315.59

PACS: 42.55.Px

Received: 12.04.1982
Revised: 25.06.1982


 English version:
Soviet Journal of Quantum Electronics, 1983, 13:5, 632–634

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