S. A. Akhmanov, I. B. Khaibullin, M. F. Galyautdinov, N. I. Koroteev, G. A. Paĭtyan, E. I. Shtyrkov, I. L. Shumaĭ, “Second harmonic generation during laser annealing of the surface of gallium arsenide”, Kvantovaya Elektronika, 1983, Volume 10, Number 6,Pages <nobr>1077

This article is cited in 3 papers

Letters to the editor

Second harmonic generation during laser annealing of the surface of gallium arsenide

S. A. Akhmanov, I. B. Khaibullin, M. F. Galyautdinov, N. I. Koroteev, G. A. Paĭtyan, E. I. Shtyrkov, I. L. Shumaĭ

Abstract: The process of recrystallization of the surface of GaAs during pulsed laser annealing was investigated using generation (by reflection from the surface) of the second harmonic of mode-locked radiation from another laser. The recrystallization time did not exceed 30–40 nsec. The results were accounted for by the melting theory of laser annealing.

UDC: 621.373.826

PACS: 42.65.Cq, 81.40.Ef, 42.60.Kg

Received: 08.02.1983