RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1983 Volume 10, Number 8, Pages 1696–1699 (Mi qe4589)

This article is cited in 1 paper

Brief Communications

Investigation of the relaxation mechanism of the lower active levels of a photochemical XeO laser

A. M. Pravilov, I. I. Sidorov, V. A. Skorokhodov


Abstract: An investigation was made of the luminescence of an excimer XeO $(a^1\Sigma^+,b^1\Pi)$, formed as a result of the reactions O $(^1D)+$ Xe $\rightleftarrows$ XeO $(a^1\Sigma^+,b^1\Pi)$, O $(^1S)+$ Xe $+$ Xe $\to$ XeO $^*(d^1\Sigma^+)+$ Xe, and XeO $^*(d^1\Sigma^+)\to$ XeO $(a^1\Sigma^+,b^1\Pi)+h\nu$. The transition in the last reaction involved a level of VeO $(a^1\Sigma^+,b^1\Pi)$ lying above the lowest of the points of crossing of these and of $X^3\Pi$, $A^3\Sigma$ states, so that the molecules of XeO $(a^1\Sigma^+,b^1\Pi)$ predissociated rapidly.

UDC: 621.373.826.038.823

PACS: 42.55.Fn, 33.80.Gj

Received: 03.11.1982


 English version:
Soviet Journal of Quantum Electronics, 1983, 13:8, 1119–1121

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024