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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1984 Volume 11, Number 2, Pages 375–381 (Mi qe4857)

This article is cited in 1 paper

Injection traveling-wave laser amplifier based on a (GaAI)As double heterostructure

I. S. Goldobin, V. N. Luk'yanov, A. F. Solodkov, V. P. Tabunov, S. D. Yakubovich


Abstract: Theoretical and experimental investigations were made of single-pass amplification of narrowband optical signals in resonator-free stripe heterostructures operated at room temperature. The following optophysical characteristics of laser amplifiers of this type were recorded: the maximum gain was 26 dB; the output signal/background ratio was up to 7 dB without spectral selection and up to 24 dB when an output filter with a pass band 0.1 nm wide was used; the sensitivity was of the order of 100 nW; the output signal power was up to 20 mW; the linear operation range was in excess of 20 dB; the response time in the linear region was less than 1 nsec. The experimental results were in satisfactory agreement with calculations.

UDC: 621.375.8.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Lh, 42.79.Ci, 42.70.Hj

Received: 16.03.1983


 English version:
Soviet Journal of Quantum Electronics, 1984, 14:2, 255–259

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© Steklov Math. Inst. of RAS, 2025