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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1995 Volume 22, Number 9, Pages 895–896 (Mi qe488)

This article is cited in 2 papers

Lasers

Optical strength of the mirror faces of a pulsed InGaAs/GaAs/GaAIAs semiconductor laser

P. G. Eliseeva, G. T. Mikayelyanb

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Volga Scientific-Research Institute, Saratov

Abstract: Measurements were made of the pulsed power at the optical self-damage threshold of quantum-well laser diodes emitting in the wavelength range 960–980 nm and based on a heterostructure with a strained active layer. When the pulse duration was 100 ns, the optical strength of a mirror end face was estimated to be 80–90 MW cm-2, which was considerably higher than for semiconductor lasers emitting at shorter wavelengths.

PACS: 42.55.Px, 61.80.Ba

Received: 10.01.1995


 English version:
Quantum Electronics, 1995, 25:9, 863–864

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