Semiconductor laser made of Bi1–xSbx

An experimental study was made of the emission of radiation of wavelengths near 100 μ by a laser made of Вi_1–xSb_x. Theoretical estimates were obtained of the threshold density n of electronhole pairs. It was found that lasing appeared at n ≈ 4 × 10¹⁵ cm^–3 when the temperature was 16K and the current 1.4 A.