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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1983 Volume 10, Number 10, Pages 2109–2110 (Mi qe4932)

Brief Communications

Laser annealing of cadmium sulfide crystals

I. V. Vasilishcheva, V. M. Zubkov, R. M. Savvina, G. G. Skrotskaya, N. F. Starodubtsev, O. N. Talenskiĭ, V. N. Poluboyarov, V. A. Trufan


Abstract: Cadmium sulfide crystals with a disturbed surface layer about 5 μ thick were annealed by KrF* laser pulses of 10 nsec duration. This improved the crystal structure when the cadmium side was irradiated. The effect was not detectable on the sulfur side. The threshold energy density of the effect was ~0.25 J/cm2.

UDC: 535.211:549.31:546.48

PACS: 81.40.Ef, 42.60.Kg

Received: 16.02.1983


 English version:
Soviet Journal of Quantum Electronics, 1983, 13:10, 1407–1408

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© Steklov Math. Inst. of RAS, 2024