L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm<sup>2</sup> at 300 К”, Kvantovaya Elektronika, 1984, Volume 11, Number 4,Pages <nobr>645

This article is cited in 3 papers

Letters to the editor

Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К

L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko

Abstract: Double-sided heterostructures with a three-layer waveguide including a thin (of thickness less than 0.1 μ) narrow-gap active layer were formed by the liquid epitaxy method on p-type InP substrates. The threshold current density in high-Q four-sided cavities was reduced to 512 A/cm² at room temperature and continuous emission was observed from broad-area diodes.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Da, 42.60.Pk, 42.60.Jf, 42.79.Gn

Received: 29.11.1983