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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1994 Volume 21, Number 3, Pages 205–208 (Mi qe50)

This article is cited in 1 paper

Lasers

Single-frequency GaAIAs/GaAs lasers

O. V. Zhuravleva, N. N. Kiseleva, V. D. Kurnosov, O. Yu. Malashina, A. A. Chel'nyi, V. A. Shishkin

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: Lasers emitting at wavelengths of 780–850 nm with an output power up to 20 mW in the single-frequency regime were developed. At output powers up to 5 mW there was no mode 'hopping' and the experimental characteristics of the lasers agreed well with theoretical predictions. The minimum width of the emission line of these lasers was 35 MHz and the ratio of the powers of the lasing and adjacent modes exceeded 20 dB.

PACS: 42.55.Px, 42.60.L

Received: 27.04.1993


 English version:
Quantum Electronics, 1994, 24:3, 187–190

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