Abstract:
An investigation was made of spatial modulation of light in structures formed from an insulated semiconductor and a liquid crystal. It was found that the modulation parameters (sensitivity and resolution) were influenced strongly by the accumulation of carriers in the semiconductor when the structure was subjected to an alternating voltage. A resolution of about 100 lines/mm and a sensitivity down to 10–9 J/cm2 were achieved for a structure with gallium arsenide as the semiconductor.