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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1984 Volume 11, Number 4, Pages 748–752 (Mi qe5023)

This article is cited in 4 papers

Nonlinear interaction of infrared waves on a VO2 surface at a semiconductor-metal phase transition

N. K. Berger, E. A. Zhukov, V. V. Novokhatskiĭ


Abstract: The use of a semiconductor-metal phase transition for wavefront reversal of laser radiation was proposed. An investigation was made of nonlinear reflection of CO2 laser radiation at a phase transition in VO2. A three-wave interaction on a VO2 surface was achieved using low-power cw and pulsed CO2 lasers. In the first case, the intensity reflection coefficient was 0.5% for a reference wave intensity of 0.9 W/cm2 and in the second case, it was 42% for a threshold reference wave energy density of 0.6–0.8 mJ/cm2.

UDC: 621.375.826

PACS: 42.65.Hw, 42.55.Lt, 42.60.Jf

Received: 03.06.1983


 English version:
Soviet Journal of Quantum Electronics, 1984, 14:4, 505–508

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© Steklov Math. Inst. of RAS, 2025