Abstract:
The influence of excess carriers on the overcoming of pinning centers of gliding dislocations is analyzed for the case when such carriers are captured by a dislocation near a pinning center or by the pinning center itself. Resonance defect-forming electron capture is assumed. It is shown that at subcritical densities of excess carriers a dislocation travels by successive detachment from pinning centers, but when this density (rate of pumping) reaches a critical value, the dislocation velocity increases abruptly to a value expected for obstacle-free motion.