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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1973 Number 5(17), Pages 116–117 (Mi qe5541)

This article is cited in 1 paper

Brief Communications

Internal Q switching in single-sided heterojunction injection lasers

P. G. Eliseev, L. P. Ivanov, A. S. Logginov, E. P. Nikitin


Abstract: An experimental study was made of the internal Q switching in AlxGa1–x–GaAs single-sided heterojunction injection lasers. A study was made of the dynamics of the emission spectrum on transition from the spontaneous emission to the Q-switching conditions when a diode emitted single light pulses of ~120 psec duration at a time corresponding to the trailing edge of the pumping current pulse.

UDC: 621.378.3

PACS: 42.55.Px, 42.60.Gd, 42.60.Jf, 42.60.Da

Received: 05.09.1972


 English version:
Soviet Journal of Quantum Electronics, 1974, 3:5, 433–434


© Steklov Math. Inst. of RAS, 2024