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Kvantovaya Elektronika, 1990 Volume 17, Number 2, Pages 247–249 (Mi qe5583)

Laser applications

Reflection of far-infrared radiation from a hot plasma in a semiconductor

E. A. Andryushin, R. I. Ekzhanov, I. N. Sisakyan, A. B. Shvartsburg, A.V. Shepelev


Abstract: An analysis is made of the optical properties of a semiconductor plasma in the far-infrared and submillimeter ranges. Special features of the nonlinear optical characteristics of semiconductors observed in this range are discussed. Estimates are obtained of the limiting values of the switching times when the incident radiation is controlled by heating of a semiconductor plasma.

UDC: 621.373.826

PACS: 78.20.Ci, 78.30.-j, 72.30.+q

Received: 22.02.1989


 English version:
Soviet Journal of Quantum Electronics, 1990, 20:2, 195–197

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© Steklov Math. Inst. of RAS, 2024