RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1982 Volume 9, Number 7, Pages 1486–1488 (Mi qe5711)

Brief Communications

Cathodoluminescence of epitaxial Pb1–xSnxTe films with a composition gradient in the growth plane

A. N. Vlasov, V. I. Stafeev, A. I. Uvarov, E. M. Kistova, A. N. Likholetov, M. A. Konstantinova


Abstract: Resublimation in a hydrogen stream produced epitaxial Pb1–xSnxTe films of constant composition as well as with a composition gradient in the growth plane. The integrated intensity of the cathodoluminescence was comparable with the intensity of the luminescence emitted by lead tin tellunde of compositions in the range x = 0–0.5 mole SnTe. The optimal growth temperature was 780–790°C when the temperature drop between the source and the substrate was about 10°C. The wavelength of the cathodoluminescence emitted at 90°K varied from 5 to 15 μ along the composition gradient.

UDC: 621.373.826.038.825.4

PACS: 78.60.Hk, 68.55.+b

Received: 10.06.1981
Revised: 15.09.1981


 English version:
Soviet Journal of Quantum Electronics, 1982, 12:7, 949–951

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024