Yu. A. Bykovskii, I. G. Goncharov, I. T. Rassokhin, A. F. Uzkii, “Electron-beam-pumped heterostructure lasers”, Kvantovaya Elektronika, 1974, Volume 1, Number 1,Pages <nobr>141

Brief Communications

Electron-beam-pumped heterostructure lasers

Yu. A. Bykovskii, I. G. Goncharov, I. T. Rassokhin, A. F. Uzkii

Abstract: The threshold current of GaAs samples with waveguide structures and optimal doping was reduced compared with the threshold current of homogeneously doped lasers. The threshold was reduced to 0.15–0.2 A/cm² for electrons of 30–50 keV energy and the external differential quantum efficiency was increased.

UDC: 621.378.35

PACS: 42.55.Px, 42.60.By, 42.60.Lh, 42.60.Da, 42.79.Bh

Received: 14.02.1972
Revised: 30.07.1972