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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1986 Volume 13, Number 2, Pages 271–280 (Mi qe5734)

This article is cited in 1 paper

Role of quasienergy levels in the processes of amplification of light by stimulated emission of radiation

R. N. Shakhmuratov


Abstract: A theoretical study is made of the influence of changes in the relaxation of a three-level system in a resonance field on the dispersion, absorption, and difference between the populations of levels activated by noncoherent pumping. This change in the relaxation is due to a tendency of a thermal reservoir to create an additional difference between the populations of quasienergy states that appear under the influence of the resonance field. It is shown that as a consequence there is a considerable change in the nature of the interaction with the radiation field in laser crystals with three-level active centers when the pump power is close to the threshold. The lasing conditions are found subject to such changes. It is shown that the threshold pump power can be reduced in this case to a value at which the difference between the populations of the active levels vanishes and lasing appears because of an inversion of the populations in a system of quasienergy levels. Under transient conditions the lasing frequency near the threshold should then depend on the pump

UDC: 621.375.8

PACS: 42.50.Gy, 42.50.Ct, 42.50.Nn, 42.55.Ah

Received: 23.03.1984
Revised: 20.06.1985


 English version:
Soviet Journal of Quantum Electronics, 1986, 16:2, 182–188

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