Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range

To improve the parameters of laser diodes emitting in the 1000–1070-nm spectral range and develop highly efficient laser diodes emitting in the 1070–1100-nm range, it is proposed to introduce GaAsP barrier layers into the active region of the quantum-well InGaAs/AlGaAs heterostructure, which compensate for enhanced mechanical stresses. This considerably improves the luminescence characteristics of heterostructures and changes conditions for generating misfit dislocations. The long-wavelength lasing at 1100 nm becomes possible due to an increase in the thickness of quantum wells and in the molar fraction of InAs in them. The manufactured laser diodes emitting in the 1095–1100-nm range have low threshold currents, the high output power and high reliability.