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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1982 Volume 9, Number 8, Pages 1614–1619 (Mi qe5777)

This article is cited in 1 paper

Multistage sensitization of 4F9/24I11/2 and 4F9/24I13/2 lasing transitions in Er3+ ions in a BaYb2F8 crystal

B. M. Antipenko, A. A. Mak, O. B. Raba, B. V. Sinitsyn, T. V. Uvarova


Abstract: A new method was developed for determining the mechanism of anti-Stokes filling of luminescent levels of an activator in a rare-earth crystal. An investigation was made of the dependences of the absolute populations of the 4I13/2, 4I11/2, 4F9/2, 4S3/2, H9/2, 4G11/2, and 2P3/2 levels of Er3+ in a BaYb2F8 crystal on the energy absorbed within the Yb3+ sensitizer band. The mechanisms of anti-Stokes filling of the 4I13/2, 4F9/2, 4S3/2, and 2H9/2 levels of Er3+ were determined under conditions of weak (1 mJ/cm3) and strong (~10 J/cm3) pumping.

UDC: 621.373:535

PACS: 78.55.Hx, 78.30.Gt, 78.45.+h

Received: 23.08.1981


 English version:
Soviet Journal of Quantum Electronics, 1982, 12:8, 1034–1037

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