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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 2, Pages 430–433 (Mi qe5912)

Brief Communications

Lead-tin telluride injection lasers prepared by diffusion of Sb

A. L. Kurbatov, M. V. Shubin, P. M. Starik, V. M. Malovetskaya, A. D. Britov, N. D. Polchkova


Abstract: The method of donor diffusion was used to prepare Pb1–xSnxTe (x =0.18–0.24) laser diodes operating continuously at 10 K. The emission spectra of these lasers and the dependences of the spectra on the ambient temperature and injection current were investigated. The lasers were used in several high-resolution spectroscopy experiments.

UDC: 621.375.826

PACS: 42.55.Px

Received: 22.06.1980
Revised: 05.09.1980


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:2, 264–266

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