L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 1982, Volume 9, Number 9,Page 1749

Letters to the editor

Continuous-wave injection lasers emitting in the 1.5–1.6 μ range

L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko

Abstract: Continuous lasing at room temperature was achieved in injection lasers with buried mesa-stripe GaInPAs/InP heterostructures emitting in the wavelength range 1.5–1.6 μ. The substrates were made of p-type InP, whereas the emitter layers and the material above the buried heterostructure was a quaternary solid solution of intermediate composition. The minimum threshold current was 23 mA.

UDC: 621.373.826.038.825.4

PACS: 42.60.By, 42.55.Px

Received: 06.08.1982