Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers

A study was made of the influence of temperature on the lasing threshold and of the slope of the watt-ampere characteristics of injection lasers in the wavelength range 0.96–1.33 μ. (temperature interval 100–355 °K). The value of the constant T₀ in the temperature dependence of the threshold increased on increase in the discontinuity of the band gap Δ E at the heterojunction in the range Δ E ≤ 0.2–0.3 eV; at higher values of Δ E there was no increase in T₀ and the high-temperature value of T₀ was on the average about 60 °K. A comparison of the temperature dependences of the threshold and of the differential efficiency led to the conclusion that the dominant factor responsible for the rise of the threshold was nonradiative recombination; the increase in the optical absorption resulted in a reduction in the slope of the watt-ampere characteristic on increase in temperature.