V. K. Batovrin, I. A. Garmash, V. M. Gelikonov, G. V. Gelikonov, A. V. Lyubarskii, A. G. Plyavenek, S. A. Safin, A. T. Semenov, V. R. Shidlovskiĭ, M. V. Shramenko, S. D. Yakubovich, “Superluminescent diodes based on single-quantum-well (GaAl)As heterostructures”, Kvantovaya Elektronika, 1996, Volume 23, Number 2,Pages <nobr>113

This article is cited in 16 papers

Lasers

Superluminescent diodes based on single-quantum-well (GaAl)As heterostructures

V. K. Batovrin^ab, I. A. Garmash^c, V. M. Gelikonov^d, G. V. Gelikonov^d, A. V. Lyubarskii^ab, A. G. Plyavenek^ba, S. A. Safin^c, A. T. Semenov^c, V. R. Shidlovskiĭ^c, M. V. Shramenko^ab, S. D. Yakubovich^a

^a Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
^b The All Russian Scientific-Research Institute for Optic Physical Metrology of Government Standard, Moscow
^c Superlum Diodes Ltd., Moscow
^d Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Theoretical and experimental investigations were made of the power, spectral, and polarisation characteristics of superluminescent diodes based on (GaAl)As heterostructures with separate confinement and a quantum-well active layer. The technical characteristics of these diodes were not inferior to those of superluminescent diodes based on traditional double-sided heterostructures. The new diodes were superior to the traditional heterostructures in respect of the half-width of the emission spectrum which was up to 100 nm, corresponding to a coherence length less than 7 μm. Test samples of light-emitting modules based on the investigated diodes were constructed.

PACS: 42.55.Px, 85.60.Jb

Received: 01.01.1996