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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1982 Volume 9, Number 10, Pages 2099–2102 (Mi qe6070)

This article is cited in 6 papers

Brief Communications

Improvement of the characteristics of ZnSe single-crystal semiconductor lasers pumped longitudinally by an electron beam

I. V. Akimova, A. V. Dudenkova, V. I. Kozlovsky, Yu. V. Korostelin, A. S. Nasibov, P. V. Reznikov, E. M. Tishina, P. V. Shapkin


Abstract: The cathodoluminescence spectrum of ZnSe single crystals grown from the vapor and liquid phases was investigated in the range 400–800 nm and the internal quantum efficiency η was measured at T = 77 °K. A correlation was found between η and the free-electron line intensity, but there was no correlation between η and other luminescence lines. A comparison of the photoluminescence spectra recorded at 4.2 °K for zinc selenide samples annealed in zinc and selenium with the spectra of the original samples indicated that the saturation with zinc during annealing increased η and improved the laser characteristics.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 78.55.Ds, 78.60.Hk, 81.40.Tv

Received: 17.02.1982


 English version:
Soviet Journal of Quantum Electronics, 1982, 12:10, 1366–1368

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© Steklov Math. Inst. of RAS, 2024