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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1982 Volume 9, Number 11, Pages 2167–2172 (Mi qe6087)

This article is cited in 2 papers

Optimal regime for forming topological patterns when processing films with laser radiation

V. P. Veiko, I. M. Karpman, M. N. Libenson, E. B. Yakovlev


Abstract: The results are given of an experimental investigation of the physical and technological laws governing the formation of individual precision components in thin films, and of the synthesis of these pattern components using the contour-projection method. A study was made of the influence on the quality of the synthesized pattern of the degree of overlapping of the neighboring components. The results of the experiments were used to establish the fundamental limitations of this method. A method is proposed for selecting the optimal processing regime.

UDC: 621.373.826

PACS: 68.55.+b, 79.20.Ds, 78.90.+t, 81.40.-z

Received: 30.11.1981


 English version:
Soviet Journal of Quantum Electronics, 1982, 12:11, 1408–1411

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