Investigation of cw operation of a GaAs laser pumped by an electron beam

An experimental investigation was made of the dependences of the power and threshold characteristics of an electron-beam-pumped cw GaAs laser on the concentration and nature of the dopant, thickness of the semiconductor plate, reflection coefficient of the mirrors, diameter of the electron beam, and cryostat temperature. An output power of 20 mW was recorded and the output radiation was found to have a divergence of less than 10° and a spectral width not exceeding 1 nm.