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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1985 Volume 12, Number 2, Pages 387–390 (Mi qe6204)

This article is cited in 3 papers

Brief Communications

Spatial hysteresis and switching waves in thin-film semiconductor interferometers

S. P. Apanasevich, F. V. Karpushko, G. V. Sinitsyn


Abstract: An experimental investigation was made of the transformation of the intensity profile of a spatially confined light beam transmitted by optical bistable devices based on thin-film semiconductor interferometers formed by vacuum evaporation. A hysteresis of the intensity profile and switching waves was observed: these waves represented the process of consecutive transition from one stable state to another in neighboring zones of the interferometer. An experimental investigation was made of the velocity of switching waves in thin-film interferometers and in a model interferometer with a thermal nonlinearity.

UDC: 530.145:681.327

PACS: 42.65.Pc, 07.60.Ly, 42.70.Nq

Received: 19.06.1984
Revised: 28.09.1984


 English version:
Soviet Journal of Quantum Electronics, 1985, 15:2, 251–253

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