RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 3, Pages 656–660 (Mi qe6376)

This article is cited in 9 papers

Brief Communications

Luminescence and stimulated emission from BaGd2–xNdx(MoO4)4 single crystals

T. P. Balakireva, Ch. M. Briskina, E. V. Vasil'ev, V. V. Vakulyuk, V. F. Zolin, A. A. Maier, V. M. Markushev, V. A. Murashov, M. V. Provotorov


Abstract: The Stark structure of the 4F3/2, 4I11/2, and 4I9/2 levels of Nd3+ was determined for BaGd2–xNdx(MoO4)4 crystals. An investigation was made of concentration quenching of Nd3+ luminescence, which was found to be due to a cross relaxation mechanism. Ofelt parameters were estimated and molar absorption in the possible pumping range of Nd3+ was measured. The effective stimulated emission cross section was measured for the highest-intensity component of the 4F3/24I11/2 transition (λ = 1061 nm). For x = 0.15, stimulated emission was obtained from a flashlamp-pumped single crystal sample 1.2 mm thick.

UDC: 535.37

PACS: 42.55.Rz, 78.55.Hx, 78.45.+h

Received: 07.08.1980


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:3, 398–400

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024