Electron-beam-pumped semiconductor laser with a waveguide output

The active region of a semiconductor laser pumped transversely by an electron beam was brought into direct contact with a multimode waveguide which had a 50-μ diameter core. The powers coupled into the waveguide from homogeneous, waveguide, and three-layer epitaxial GaAs–GaAlAs laser structures were 34, 430, and 35 mW, respectively, and the corresponding coupling-in efficiencies were 0.1, 0.3, and 0.06. Reduction in the width of the angular distribution and increase in the laser power in a system with an external mirror increased the spectral and total brightness of the laser radiation.