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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 4, Pages 745–750 (Mi qe6445)

This article is cited in 1 paper

Influence of dislocations on the characteristics of laser screens made of CdS

V. I. Kozlovsky, A. S. Nasibov, P. V. Reznikov


Abstract: The characteristics of a laser screen made of CdS and operating at 80 °K were investigated as a function of the density of growth dislocations in the range 5×10 – 2×107 cm–2 and of mechanically introduced dislocations with densities up to 6×107 cm–2. The influence of the dislocation density on the characteristics of a laser screen operated at high excitation rates was found to depend on the state of the broken bonds but not on the nature of dislocations.

UDC: 621.378.35:621.315.592

PACS: 42.55.Px, 61.70.Le

Received: 06.07.1980


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:4, 450–453

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© Steklov Math. Inst. of RAS, 2024