Highly efficient semiconductor laser with longitudinal pumping of gallium arsenide by a scanning electron beam

The efficiency characteristics were determined for gallium arsenide crystal lasers of different thicknesses when the electron energy was 50 or 75 keV and the temperature was 80 or 300 K. The internal differential efficiency of the laser reached 24±5% at 80 K and 7.1±1.5% at 300 K. It was found that when the laser radiation intensity was 10⁵ W/cm² or higher, the passive part of the resonator was bleached and this ensured a high efficiency.