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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1987 Volume 14, Number 1, Pages 204–205 (Mi qe6521)

Brief Communications

Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range

I. V. Akimova, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, B. N. Sverdlov


Abstract: An electron-microscopic investigation was made of the end mirror faces of cw InGaAsP/lnP lasers which failed in the course of accelerated life tests (up to 1000 h at 70–100 °C). Surface defects were observed on the mirror faces and they resembled optical damage defects reported for GaAlAs lasers.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Pk, 42.87.-d, 06.60.Mr

Received: 08.04.1986


 English version:
Soviet Journal of Quantum Electronics, 1987, 17:1, 121–122

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© Steklov Math. Inst. of RAS, 2024