Sealed scanned electron-beam-excited semiconductor laser

A cadmium sulfide "radiating mirror" laser, pumped by scanning with an election beam, was constructed. The laser threshold was reached under a voltage of 30 kV and a current density of 15–20 A/cm². The pulsed output power was up to 2 W, the efficiency was up to 8%, and the electron-beam diameter was 50–60 μ.