RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 4, Pages 880–882 (Mi qe6877)

This article is cited in 1 paper

Brief Communications

Bistable cw injection heterolaser

I. S. Goldobin, V. D. Kurnosov, V. N. Luk'yanov, G. T. Pak, A. T. Semenov, N. V. Shelkov, S. D. Yakubovich, I. V. Yashumov


Abstract: It was found experimentally that GaAlAs heterolasers exhibit, like gallium arsenide homolasers, bistable operation under inhomogeneous injection conditions. The width of the hysteresis loop of the watt-ampere characteristic, governing the range of existence of bistable operation, reached 20 mA. Transient abrupt switching was observed.

UDC: 621.373.826.038.824.4

PACS: 42.55.Px

Received: 15.09.1980


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:4, 526–527

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024