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Kvantovaya Elektronika, 1981 Volume 8, Number 5, Pages 1073–1078 (Mi qe6944)

Influence of adhesion on processes of laser heating and damage to thin absorbing films

E. B. Yakovlev


Abstract: A phenomenological approach is proposed to allow for the influence of adhesion on the rate of heating of thin films exposed to laser radiation. It is found that the adhesion determines the mechanism of damage to thin films in the advanced damage threshold regime. Conditions for which the melt rolling mechanism of damage to thin films predominates in the advanced damage threshold regime are determined.

UDC: 539.216.22

PACS: 61.80.-x, 68.60.+q, 42.60.He

Received: 24.09.1980


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:5, 637–640

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