Optimization of the temperature interval in accelerated life tests on Ga1–xAlxAs–GaAs heterojunction lasers

An investigation was made of the reasons why Ga_1–xAl_xAs–GaAs heterolasers failed during accelerated tests involving cw emission at various ambient temperatures. It was found that at temperatures of 100 °C and above the failure due to structural deterioration of the active material was accompanied by degradation of the electric contact. The range of temperatures suitable for accelerated tests on heterolasers, designed to predict their service life, was determined.