RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1990 Volume 17, Number 7, Pages 931–933 (Mi qe7117)

This article is cited in 1 paper

Applications of lasers and other topics in quantum electronics

Kinetics of laser-stimulated etching of CdxHg1 – xTe

M. R. Brook, F. V. Bunkin, A. A. Lyalin, G. A. Shafeev


Abstract: An experimental investigation was made of laser-stimulated etching of a II-VI semiconductor in liquid solutions containing Br2. Rectangular channels were etched in CdxHg1 – xTe at rates up to 1 cm/s. The spatial resolution of the channels was ~ 5 μm to a depth of ~ 20 μm. The etching kinetics was governed by the thermal diffusion instability of the etchant layer.

UDC: 620.179.111.5:621.373.826

PACS: 79.20.Ds, 81.65.Cf, 66.10.Cb

Received: 05.04.1989


 English version:
Soviet Journal of Quantum Electronics, 1990, 20:7, 854–856

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025