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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1990 Volume 17, Number 8, Pages 964–968 (Mi qe7148)

This article is cited in 5 papers

Lasers

Leakage currents and 1/f noise in buried InGaAsP/InP heterostructure lasers

I. A. Garmash, V. N. Morozov, A. T. Semenov, M. A. Sumarokov, V. R. Shidlovskiĭ


Abstract: An investigation was made of the relationship between the excess 1f 1/f noise and electrical characteristics of InGaAsP heterojunction lasers. The excess noise level was found to be governed by the nonradiative current in these lasers. Degradation of these laser diodes resulted in an increase in the 1/f noise.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Mi, 42.70.Hj, 42.70.Nq, 42.60.Jf

Received: 03.01.1989
Revised: 31.01.1990


 English version:
Soviet Journal of Quantum Electronics, 1990, 20:8, 882–886

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© Steklov Math. Inst. of RAS, 2024