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Kvantovaya Elektronika, 1985 Volume 12, Number 6, Pages 1307–1309 (Mi qe7178)

Brief Communications

Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers

I. V. Akimova, T. I. Berezina, A. N. Pechenov, V. I. Reshetov, L. E. Reshetova, P. V. Shapkin


Abstract: An investigation was made of the influence of an excess sulfur partial pressure in the range 10–3– (2×102) Torr on the low-temperature photoluminescence spectra and also on the lasing threshold and the differential efficiency of electron-beam-excited lasers. The best laser characteristics, including degradation stability, were obtained for sulfur pressures of 1–10 Torr.

UDC: 621.373.826.038.825.4

PACS: 42.55.Rz, 42.70.Mp, 78.55.Hx, 42.60.Lh, 81.10.Bk

Received: 04.10.1984
Revised: 10.12.1984


 English version:
Soviet Journal of Quantum Electronics, 1985, 15:6, 867–868

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© Steklov Math. Inst. of RAS, 2024