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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1986 Volume 13, Number 8, Pages 1610–1616 (Mi qe7237)

This article is cited in 4 papers

Influence of anlsotropic deformation on radiative characteristics of GaInAsP/InP injection lasers. II. Spectral characteristics and discussion

P. G. Eliseev, B. N. Sverdlov, I. Ismailov, N. Shokhudzhaev


Abstract: A study was made of the spectral characteristics of GaInAsP/InP double-heterostructure injection lasers (λ~1.08–1.61μ, 300K) as a function of pressure under uniaxial compression allowing for internal residual stresses in the active layer. The shear constants of the deformation potential of the valence band b= –2.0 ± 0.1eV, b'=1.0 ± 0.1eV and the constant of the deformation potential for the variation of the band gap α= –10.6 ± 0.5 eV were determined for a quaternary compound corresponding to the ~1.3μ wavelength. Mechanisms responsible for the influence of deformation on the radiative characteristics of GaInAsP/InP heterojunction lasers are discussed.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Jf, 68.60.Bs, 73.20.At

Received: 18.06.1985


 English version:
Soviet Journal of Quantum Electronics, 1986, 16:8, 1051–1055

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