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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1997 Volume 24, Number 1, Pages 17–19 (Mi qe726)

This article is cited in 31 papers

Lasers

Lasing characteristics of a diode-pumped Nd3+ :CaGdAlO4 crystal

A. A. Lagatskiia, N. V. Kuleshova, V. G. Shcherbitskiia, V. F. Kleptsyna, V. P. Mikhailova, V. G. Ostroumovb, G. Huberb

a International Laser Center, Belarus State Technical University, Minsk
b The University of Hamburg, Germany

Abstract: A new Nd3+-doped CaGdAlO4 laser crystal was investigated. This crystal was grown by the Czochralski method. The atomic concentration of Nd3+ in the melt was 2%. The absorption and luminescence spectra were analysed and the Stark structure of the upper and lower active levels was determined. The lifetime of the upper level was ~140 μs. The stimulated emission cross section at the 1078 nm wavelength was 1.1 × 10–19cm2 for the E || c polarisation. A GaAlAs diode, with an output power of 3 W emitting at the wavelength 806.5 nm, was used as the pump source. The slope efficiency was 37% at the 1078 nm wavelength when the output mirror transmission was 5%. The output radiation power of the crystal laser was 360 mW when the absorbed pump power was 1.29 W.

PACS: 42.55.Rz, 42.55.Xi, 42.70.Hj

Received: 26.04.1996


 English version:
Quantum Electronics, 1997, 27:1, 15–17

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