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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1986 Volume 13, Number 9, Pages 1749–1769 (Mi qe7365)

This article is cited in 4 papers

Causes and distribution of failure of semiconductor lasers (review)

P. G. Eliseev


Abstract: An analysis is made of the various factors that affect the reliability of semiconductor lasers and the results of laboratory service life tests are reviewed. The service life of GaAlAs/GaAs injection lasers exceeds 5×104 h and extrapolation of high-temperature tests suggests that it may exceed 106 h. Equally long service life is expected for InGaAsP/InP lasers and the published extrapolated values of the continuous service life exceed 1010h (at 10°C). The nature and the parameters of the distributions of failure are discussed and ways of forecasting the service life are considered.

UDC: 621.373:826.038.825.4

PACS: 42.55.Px, 01.30.Vv, 42.60.Jf

Received: 25.02.1986


 English version:
Soviet Journal of Quantum Electronics, 1986, 16:9, 1151–1164

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© Steklov Math. Inst. of RAS, 2025