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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1996 Volume 23, Number 8, Pages 701–703 (Mi qe754)

This article is cited in 1 paper

Lasers

Single-mode emission from injection lasers with a trapezoidal active region

I. A. Avrutskiĭa, S. A. Akhlestinab, E. M. Dianova, N. B. Zvonkovb, E. R. Lin'kovab, G. A. Maksimovb

a Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: Semiconductor injection lasers with a trapezoidal active region were made and investigated. The results demonstrated that this configuration of the active region could result in the formation of a narrow angular distribution of the laser radiation.

PACS: 42.55.Px, 42.60.Jf

Received: 01.01.1996


 English version:
Quantum Electronics, 1996, 26:8, 682–684

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