A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4<i>μ</i> (300K)”, Kvantovaya Elektronika, 1986, Volume 13, Number 10,Pages <nobr>2119

This article is cited in 2 papers

Brief Communications

Injection InGaSbAs laser emitting at 2.4μ (300K)

A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin

Abstract: Laser heterostructures were formed from quaternary InGaSbAs (active layer) and GaAlSbAs (emitter layer) solid solutions. Lasing was observed at the wavelength of 2.4μ and the threshold current density was 7.6kA/cm² for a four-sided cleaved resonator at room temperature. Continuous-wave lasing was achieved at the wavelength of 2.1μ when the heterostructure was cooled with liquid nitrogen.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Da, 42.60.Pk, 42.70.Hj, 42.70.Nq

Received: 12.05.1986