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Kvantovaya Elektronika, 1990 Volume 17, Number 12, Pages 1561–1562 (Mi qe7605)

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Influence of the xenon concentration on the intensity of lasing due to high rotational levels of an XeF laser

N. G. Zubrilin, P. I. Korenyuk, M. P. Chernomorets


Abstract: An experimental investigation was made of the dependence of the laser emission spectrum from an electric-discharge XeF laser on the xenon concentration in the mixture. It was established that a high content of xenon is a necessary condition for the existence of lasing due to high rotational levels.

UDC: 621.373.826.038.823

PACS: 42.55.Lt, 42.60.By, 42.60.Jf

Received: 05.04.1990


 English version:
Soviet Journal of Quantum Electronics, 1990, 20:12, 1462–1463

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© Steklov Math. Inst. of RAS, 2024