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Kvantovaya Elektronika, 1985 Volume 12, Number 9, Pages 1814–1818 (Mi qe7659)

Fabrication and investigation of integrated-optics CdSxSe1–x waveguides

Z. È. Buachidze, I. V. Vasilishcheva, V. N. Morozov, V. A. Pletnev, A. S. Semenov, P. V. Shapkin


Abstract: The diffusion of selenium in CdS was used to fabricate planar and strip waveguides with losses in the range 3–5 dB/cm at the wavelength of 0.63 μ. A study was made of the influence of the diffusion conditions on the main waveguide parameters. A mathematical model was developed for determining the distribution of the refractive index with depth in a crystal for different diffusion regimes. A single substrate was used to form waveguides with band gaps of 2.41 and 2.47 eV. The coupling efficiency of these waveguides exceeded 90%.

UDC: 621.372.8.029.7

PACS: 42.82.Et, 42.79.Gn, 42.82.Cr, 42.70.Nq

Received: 04.04.1985


 English version:
Soviet Journal of Quantum Electronics, 1985, 15:9, 1201–1204

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© Steklov Math. Inst. of RAS, 2025