Changes in the diffraction efficiency of grating structures formed in thin films of glassy chalcogenide semiconductors by neutron irradiation

A study was made of the influence of sufficiently large neutron doses on the properties of diffraction grating structures formed in thin films of glassy chalcogenide semiconductors of the As–S system. The changes in the diffraction efficiency and in the sensitivity of the material depended strongly on the film composition. A method was found for increasing considerably the diffraction efficiency and sensitivity of some compositions by irradiation.