RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1989 Volume 16, Number 3, Pages 407–409 (Mi qe7825)

Letters to the editor

Determination of the parameters of the active medium of a recombination laser utilizing transitions in the BeIV ion

B. A. Bryunetkin, V. M. Dyakin, I. Yu. Skobelev, A. Ya. Faenov, S. Ya. Khakhalin


Abstract: An investigation was made of the formation of the active medium of a recombination laser utilizing the 4f–5g transition in the BeIV ion in an expanding laser plasma formed from a solid-state target. Spectroscopic methods were used to determine the electron density and temperature in the lasing zone. These parameters were used to find the gain due to the 4f–5g transition in the BeIV ion: at distances $x\gtrsim0{.}4$ cm from the target the gain was $5\cdot10^{-2}-10^{-1}$ cm$^{-2}$. These values were close to the gain deduced experimentally from the threshold characteristics of the lasing process.

UDC: 621.373.826.038.823

PACS: 52.50.Jm, 42.60.Jf, 52.25.Jm, 52.70.Kz

Received: 05.11.1988


 English version:
Soviet Journal of Quantum Electronics, 1989, 19:3, 271–272

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025