I. V. Akimova, M. G. Vasil'ev, E. G. Golikova, A. E. Drakin, P. G. Eliseev, V. I. Romantsevich, B. N. Sverdlov, V. I. Shveĭkin, A. A. Shelyakin, “Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and <i>n</i>-type InP substrates”, Kvantovaya Elektronika, 1989, Volume 16, Number 3,Pages <nobr>457

Lasers

Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates

I. V. Akimova, M. G. Vasil'ev, E. G. Golikova, A. E. Drakin, P. G. Eliseev, V. I. Romantsevich, B. N. Sverdlov, V. I. Shveĭkin, A. A. Shelyakin

Abstract: A description is given of planar stripe lasers with two-channel confinement in an InGaAsP/InP heterostructure with a three-layer waveguide. These lasers operate continuously in the spectral range 1.3 μm. Typical threshold currents at T = 300 K are 20–30 mA (with the minimum value 16 mA). An output power of 10 mW is obtainable up to 80°C and the maximum temperature at which cw operation is observed exceeds 100°C. The maximum output power at T = 300 K is 42 mW. An analysis is made of the relationship between the geometry of a heterostructure and the efficiency of current confinement in lasers of this type. Planar stripe heterolasers with two-channel confinement are compared with lasers based on a buried mesastripe structure.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Lh, 42.60.Pk, 42.60.Jf

Received: 17.12.1987