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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1989 Volume 16, Number 6, Pages 1138–1140 (Mi qe8122)

This article is cited in 4 papers

Lasers

Lasing in Y3Al5O12:Er3+ (λ = 2.94 μm) crystals as a result of selective excitation of the lower active level

V. I. Zhekov, V. A. Lobachev, T. M. Murina, A. V. Popov, A. M. Prokhorov, M. I. Studenikin


Abstract: Lasing was induced in Y1.5Er1.5Al5O12 (λ = 2.94 μm) crystals by selective pumping of the electronic–vibrational wing of the 4I15/24I13/2 transition. A population inversion was established in this YAG:Er3+ laser by a strong interaction between the excited Er3+ ions at the 4I13/2 level and the transfer of energy from the lower active level to the upper one in accordance with the 4I13/24I9/2, 4I13/24I15/2 scheme.

UDC: 621.373.826.038.825.7

PACS: 42.55.Rz, 42.70.Hj, 71.15.Qe

Received: 15.09.1988


 English version:
Soviet Journal of Quantum Electronics, 1989, 19:6, 737–738

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© Steklov Math. Inst. of RAS, 2024